ixys corporation 3540 bassett street, santa clara ca 95054 phone: 408-982-0700, fax: 408-496-0670 ixys semiconductor gmbh edisonstr. 15, d-68623 lampertheim phone: +49-6206-503-0, fax: +49-6206-503627 ? ixys corporation. all rights reserved. to-247 ad (ixsh) v ces i c25 v ce(sat) low v ce(sat) igbt ixsh/ixsm 40 n60 600 v 75 a 2.5 v high speed igbt ixsh/ixsm 40 n60a 600 v 75 a 3.0 v short circuit soa capability g c e symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m w 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c75a i c90 t c = 90 c40a i cm t c = 25 c, 1 ms 150 a ssoa v ge = 15 v, t j = 125 c, r g = 2.7 w i cm = 80 a (rbsoa) clamped inductive load, l = 30 m h @ 0.8 v ces t sc v ge = 15 v, v ce = 360 v, t j = 125 c 10 m s (scsoa) r g = 22 w, non repetitive p c t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque 1.13/10 nm/lb.in. weight to-204 = 18 g, to-247 = 6g maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 m a, v ge = 0 v 600 v v ge(th) i c = 4 ma, v ce = v ge 47v i ces v ce = 0.8 ? v ces t j = 25 c50 m a v ge = 0 v t j = 125 c1ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90 , v ge = 15 v 40N60 2.5 v 40N60a 3.0 v to-204 ae (ixsm) c g = gate, c = collector, e = emitter, tab = collector features l international standard packages l guaranteed short circuit soa capability l low v ce(sat) - for low on-state conduction losses l high current handling capability l mos gate turn-on - drive simplicity l fast fall time for switching speeds up to 20 khz applications l ac motor speed control l uninterruptible power supplies (ups) l welding advantages l easy to mount with 1 screw (to-247) (isolated mounting screw hole) l high power density ixys reserves the right to change limits, test conditions and dimensions. 91546f (4/96) www.datasheet.co.kr datasheet pdf - http://www..net/
ixys semiconductor gmbh edisonstr. 15, d-68623 lampertheim phone: +49-6206-503-0, fax: +49-6206-503627 ixys reserves the right to change limits, test conditions, and dimensions. ixys corporation 3540 bassett street, santa clara ca 95054 phone: 408-982-0700, fax: 408-496-0670 ixsh 40N60 ixsm 40N60 ixsh 40N60a ixsm 40N60a to-247 ad outline symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c90 ; v ce = 10 v, 16 23 s pulse test, t 300 m s, duty cycle 2 % i c(on) v ge = 15 v, v ce = 10 v 200 a c ies 4500 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 350 pf c res 90 pf q g 190 260 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 45 60 nc q gc 88 120 nc t d(on) 55 ns t ri 170 ns t d(off) 400 ns t fi 40N60 400 ns 40N60a 200 ns e off 40N60 5.0 mj 40N60a 2.5 mj t d(on) 55 ns t ri 170 ns e on 1.7 mj t d(off) 40N60 1000 ns 40N60a 340 525 ns t fi 40N60 600 1500 ns 40N60a 340 700 ns e off 40N60 12 mj 40N60a 6 mj r thjc 0.42 k/w r thck 0.25 k/w to-204ae outline 1 = gate 2 = collector 3 = emitter tab = collector 1 = gate 2 = emitter case = collector inductive load, t j = 25 c i c = i c90 , v ge = 15 v, l = 100 m h v ce = 0.8 v ces , r g = 2.7 w switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g inductive load, t j = 125 c i c = i c90 , v ge = 15 v, l = 100 m h v ce = 0.8 v ces , r g = 2.7 w remarks: switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g ixys mosfets and igbts are covered by one of the following u.s.patents: 4,835,592 4,881,108 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 www.datasheet.co.kr datasheet pdf - http://www..net/
ixys corporation 3540 bassett street, santa clara ca 95054 phone: 408-982-0700, fax: 408-496-0670 ixys semiconductor gmbh edisonstr. 15, d-68623 lampertheim phone: +49-6206-503-0, fax: +49-6206-503627 ? ixys corporation. all rights reserved. ixsh 40N60 ixsm 40N60 ixsh 40N60a ixsm 40N60a t j - degrees c -50 -25 0 25 50 75 100 125 150 bv / v ge(th) - normalized 0.7 0.8 0.9 1.0 1.1 1.2 1.3 bv ces i c = 3ma v ge - volts 45678910111213 i c - amperes 0 10 20 30 40 50 60 70 80 t j - degrees c -50 -25 0 25 50 75 100 125 150 v ce(sat) - normalized 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 v ge - volts 8 9 10 11 12 13 14 15 v ce - volts 0 1 2 3 4 5 6 7 8 9 10 v ce - volts 02468101214161820 i c - amperes 0 20 40 60 80 100 120 140 160 180 200 7v 9v 11v 13v v ce - volts 012345 i c - amperes 0 10 20 30 40 50 60 70 80 11v 7v 9v 13v t j = 25c v ge = 15v t j = 25c v ge = 15v t j = 25c i c = 20a i c = 40a i c = 80a i c = 20a i c = 40a i c = 80a v ge =15v v ce = 10v t j = 125c t j = 25c t j = - 40c v ge8th) i c = 4ma fig. 3 collector-emitter voltage fig. 4 temperature dependence vs. gate-emitter voltage of output saturation voltage fig. 5 input admittance fig. 6 temperature dependence of breakdown and threshold voltage fig. 1 saturation characteristics fig. 2 output characterstics www.datasheet.co.kr datasheet pdf - http://www..net/
ixys semiconductor gmbh edisonstr. 15, d-68623 lampertheim phone: +49-6206-503-0, fax: +49-6206-503627 ixys reserves the right to change limits, test conditions, and dimensions. ixys corporation 3540 bassett street, santa clara ca 95054 phone: 408-982-0700, fax: 408-496-0670 ixsh 40N60 ixsm 40N60 ixsh 40N60a ixsm 40N60a time - seconds 0.00001 0.0001 0.001 0.01 0.1 1 thermal response - k/w 0.001 0.01 0.1 1 v ce - volts 0 100 200 300 400 500 600 700 i c - amperes 0.01 0.1 1 10 100 t j = 125c r g = 22 w dv/dt < 6v/ns q g - ncoulombs 0 50 100 150 200 250 v ge - volts 0 3 6 9 12 15 i c = 40a v ce = 480v r g - ohms 0 1020304050 0 2 4 6 8 10 tfi - nanoseconds 0 200 400 600 800 1000 i c - amperes 0 1020304050607080 t fi - nanoseconds 0 250 500 750 1000 0 3 6 9 12 single pulse d = duty cycle d=0.01 d=0.5 d=0.2 d=0.02 e of f - millijoules t fi (-a) hi-speed e off (-a) hi-speed t j = 125c r g = 10 w e off - millijoules t fi (-a), hi-speed e off (-a), hi-speed t j = 125c i c = 40a d=0.05 d=0.1 fig.11 transient thermal impedance fig.9 gate charge characteristic curve fig.10 turn-off safe operating area fig.7 turn-off energy per pulse and fig.8 dependence of turn-off energy fall time on collector current per pulse and fall time on r g www.datasheet.co.kr datasheet pdf - http://www..net/
ixys corporation 3540 bassett street, santa clara ca 95054 phone: 408-982-0700, fax: 408-496-0670 ixys semiconductor gmbh edisonstr. 15, d-68623 lampertheim phone: +49-6206-503-0, fax: +49-6206-503627 ? ixys corporation. all rights reserved. www.datasheet.co.kr datasheet pdf - http://www..net/
ixys semiconductor gmbh edisonstr. 15, d-68623 lampertheim phone: +49-6206-503-0, fax: +49-6206-503627 ixys reserves the right to change limits, test conditions, and dimensions. ixys corporation 3540 bassett street, santa clara ca 95054 phone: 408-982-0700, fax: 408-496-0670 www.datasheet.co.kr datasheet pdf - http://www..net/
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